Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...
Reexamination Certificate
2005-06-28
2005-06-28
Schechter, Andrew (Department: 2871)
Liquid crystal cells, elements and systems
Nominal manufacturing methods or post manufacturing...
C349S039000, C349S046000
Reexamination Certificate
active
06912037
ABSTRACT:
The storage capacitor of an active matrix liquid crystal display is formed to have a second electrode (28) that laterally overlaps a first electrode (10). The drain (30) of a thin film transistor extends across the gate electrode (2). The gate electrode (2) and the first electrode (10) of the storage capacitor are formed from a single metallization layer. The width of the gate electrode (2) and the first electrode (10) will tend to vary in parallel, as a result of process variation. This parallel variation tends to cancel out subsequent variation in the kick back voltage.
REFERENCES:
patent: 4783147 (1988-11-01), Maurice et al.
patent: 5097297 (1992-03-01), Nakazawa
patent: 5299041 (1994-03-01), Morin et al.
patent: 5394258 (1995-02-01), Morin et al.
patent: 5822027 (1998-10-01), Shimada et al.
patent: 5905556 (1999-05-01), Suzuki et al.
patent: 5946065 (1999-08-01), Tagusa et al.
patent: 6040813 (2000-03-01), Takubo
patent: 6052162 (2000-04-01), Shimada et al.
patent: 6175393 (2001-01-01), Ban et al.
patent: 6686229 (2004-02-01), Deane et al.
patent: 0514029 (1992-11-01), None
Koninklijke Philips Electronics , N.V.
Schechter Andrew
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