High yielding, voltage, temperature, and process insensitive...

Details High yielding, voltage, temperature, and process insensitive... High yielding, voltage, temperature, and process insensitive...

2006-09-06

2009-06-09

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read only systems

Fusible

C365S189090, C365S225700, C327S525000

Reexamination Certificate

active

07545665

ABSTRACT:
The present invention, generally speaking, provides for a non volatile memory cell requiring no extra process steps. In one embodiment, the non volatile memory cell is a lateral polysilicon programmable read only memory cell, in particular a lateral poly fuse memory cell. Technique are provided to achieve a high yielding, voltage, temperature, and process insensitive lateral poly fuse memory. In one embodiment, a fusible link memory circuit includes a fusible link memory element and a programming circuit. The programming circuit includes a replica of the fusible link memory element and a programming current source for producing a known current density in the fusible link memory element in spite of variations including at least process variations.

REFERENCES:
patent: 6072732 (2000-06-01), McClure
patent: 7158435 (2007-01-01), Kobayashi et al.
patent: 7295057 (2007-11-01), Bhushan et al.

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