Static information storage and retrieval – Read only systems – Fusible
Reexamination Certificate
2006-09-06
2009-06-09
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read only systems
Fusible
C365S189090, C365S225700, C327S525000
Reexamination Certificate
active
07545665
ABSTRACT:
The present invention, generally speaking, provides for a non volatile memory cell requiring no extra process steps. In one embodiment, the non volatile memory cell is a lateral polysilicon programmable read only memory cell, in particular a lateral poly fuse memory cell. Technique are provided to achieve a high yielding, voltage, temperature, and process insensitive lateral poly fuse memory. In one embodiment, a fusible link memory circuit includes a fusible link memory element and a programming circuit. The programming circuit includes a replica of the fusible link memory element and a programming current source for producing a known current density in the fusible link memory element in spite of variations including at least process variations.
REFERENCES:
patent: 6072732 (2000-06-01), McClure
patent: 7158435 (2007-01-01), Kobayashi et al.
patent: 7295057 (2007-11-01), Bhushan et al.
Byrd David A.
Luich Thomas M.
Glacier Microelectronics, Inc.
Nguyen Van-Thu
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