High-yield methods of fabricating large substrate capacitors

Details High-yield methods of fabricating large substrate capacitors High-yield methods of fabricating large substrate capacitors

1996-07-29

1998-10-06

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Repair or restoration

438 14, 438250, 438393, H01L 2100

Patent

active

058175334

ABSTRACT:
Described are methods of manufacturing large substrate capacitors for multi-chip module applications and the like using procedures compatible with common semiconductor fabrication procedures. A capacitor is formed where the top electrode thereof is divided into a plurality of segmented pads which are initially electrically isolated from one another. Each segmented pad forms a capacitor with the underlying dielectric layer and bottom capacitor electrode. Each segmented capacitor is electrically tested, and defective ones are identified. A conductive layer is thereafter formed over the segmented pads such that the conductive layer is electrically isolated from the pads of defective capacitors. The conductive layer electrically couples the good capacitors in parallel to form a high-value bypass capacitor which has low parasitic inductance. Large embedded MCM bypass capacitors can thereby be fabricated with minimal impact to the overall manufacturing yield. Novel testing methods within a scanning electron microscope environment are also disclosed.

REFERENCES:
patent: 3506506 (1970-04-01), Pennebaker, Jr.
patent: 3649488 (1972-03-01), Pitetti et al.
patent: 3679497 (1972-07-01), Handy et al.
patent: 3969670 (1976-07-01), Wu
patent: 4070471 (1978-01-01), Djuric
patent: 4259367 (1981-03-01), Dougherty, Jr.
patent: 4748537 (1988-05-01), Hernandez et al.
patent: 4853827 (1989-08-01), Hernandez
patent: 4890192 (1989-12-01), Smith
patent: 5088003 (1992-02-01), Sakai et al.
patent: 5162194 (1992-11-01), Morgan
patent: 5608246 (1997-03-01), Yeager et al.
patent: 5635421 (1997-06-01), Ting

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