Patent
1975-01-03
1976-10-05
Larkins, William D.
357 13, 357 38, 357 52, 357 56, H01L 2906
Patent
active
039848590
ABSTRACT:
In a high-withstand-voltage (high-breakdown voltage) semiconductor device in which the main PN junction is of planar structure and a field limiting ring region is provided outside and around the exposed end of the main PN junction, a groove is formed between the main region to form the main PN junction and the field limiting ring region, the bottom of which groove is shallower than that of each of the regions and in the surface of which groove the end of the main PN junction and one of the ends of the PN junction between the field limiting ring region and the substrate are exposed, and the other end of the PN junction between the field limiting ring region and the substrate is exposed in the surface of another groove whose bottom is deeper than that of the field limiting ring region.
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Misawa Yutaka
Yagi Hideyuki
Yasuda Yasumichi
Hitachi , Ltd.
Larkins William D.
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