High withstand voltage-semiconductor device with shallow grooves

Details High withstand voltage-semiconductor device with shallow grooves High withstand voltage-semiconductor device with shallow grooves

1974-06-17

1976-11-23

Edlow, Martin H.

357 13, 357 34, 357 50, 357 52, 357 53, B43K 2102, B43K 2104, H01L 2990, H01L 2972

Patent

active

039940110

ABSTRACT:
In a semiconductor device which has a semiconductor substrate, a semiconductor region of opposite conductivity type with respect to the substrate and formed in one principal surface of the substrate of the planar type, and a field limiting ring formed in the one principal surface so as to surround the semiconductor region, there is provided a high breakdown voltage-semiconductor device which comprises a concave portion. The concave portion is formed between the semiconductor region and the field limiting ring so that the PN junctions between the semiconductor region and the substrate and between the field limiting ring and the substrate may be exposed to the concave portion. The concave portion is shallower than the semiconductor region and the field limiting ring, and is filled with an insulator material.

REFERENCES:
patent: 3241010 (1966-03-01), Eddleston
patent: 3335296 (1967-08-01), Smart
patent: 3391287 (1968-07-01), Kao et al.
patent: 3489622 (1970-01-01), Barson et al.
patent: 3492174 (1970-01-01), Nakamura et al.
patent: 3555373 (1971-01-01), Kawana et al.
patent: 3717507 (1973-02-01), Abe
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3755014 (1973-08-01), Appels et al.
J. Appels et al. "Local Oxidation of Silicon and its Application in Semiconductor Device Technology," Philips Res. Repts., vol. 25, (4/70), pp. 118-132.
W. B. French, "Technique for Reducing Surface Leakage and Surface Breakdown in Semiconductor Devices," RCA Tech. Note, No. 919 (10/72) 2 pages.

Affiliated with

Also associated with

Rating

High withstand voltage-semiconductor device with shallow grooves does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High withstand voltage-semiconductor device with shallow grooves, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High withstand voltage-semiconductor device with shallow grooves will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-235095