High voltage transistor with high gain

Details High voltage transistor with high gain High voltage transistor with high gain

1976-01-06

1977-08-16

Lynch, Michael J.

357 56, H01L 2972

Patent

active

040429474

ABSTRACT:
A transistor device is described in which an NPN semiconductor structure has a specially adapted N-type emitter zone and associated electrode. The emitter zone is produced by etching a cavity in one major surface of the semiconductor body followed by diffusion of N-type dopant material. Emitter, base and collector electrodes are then affixed to the appropriate surfaces of the body to provide electrical and thermal contact thereto.

REFERENCES:
patent: 3418226 (1968-12-01), Marinace
patent: 3579060 (1971-03-01), Davis
patent: 3669760 (1972-06-01), Rein et al.
patent: 3840887 (1974-10-01), Roberts et al.
patent: 3872494 (1975-03-01), Davis, Jr. et al.
patent: 3926695 (1975-12-01), U

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