Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-12-12
2006-12-12
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S501000, C257S900000
Reexamination Certificate
active
07148552
ABSTRACT:
The present invention has an object to provide a semiconductor device that is equipped with a high breakdown voltage transistor of a high junction breakdown voltage characteristic and a low voltage transistor of a high electric current drive characteristic to thereby ensure the element isolation performance in the both transistor forming regions. The semiconductor device is equipped with a high breakdown voltage transistor (a) and low voltage transistor (b) the widths of whose side walls are different from each other. The side walls of the high breakdown voltage transistor (a) each consist of four layers of first side wall film, second side wall film, third side wall film, and fourth side wall film that are formed in such a way that they are laminated from both side surfaces of a gate electrode in directions that are sidewardly remote away from this gate electrode. The side walls of the low voltage transistor (b) each consist of three layers of the first side wall film, the second side wall film, and the fourth side wall film that are formed in such a way that they are laminated from both side surfaces of a gate electrode in directions that are sidewardly remote away from this gate electrode.
REFERENCES:
patent: 6010929 (2000-01-01), Chapman
patent: 2004/0212019 (2004-10-01), Shinohara et al.
patent: 2001-93984 (2001-04-01), None
Arimura Motoharu
Fujio Masayuki
Morrison & Foerster / LLP
Pham Hoai
Sharp Kabushiki Kaisha
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