High-voltage transistor having shielding gate

Details High-voltage transistor having shielding gate High-voltage transistor having shielding gate

2006-10-10

2006-10-10

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S368000, C257S506000

Reexamination Certificate

active

07119413

ABSTRACT:
A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.

REFERENCES:
patent: 6333548 (2001-12-01), Yamane et al.
patent: 2004/0104436 (2004-06-01), Walker et al.
patent: 4-92449 (1992-03-01), None
patent: 4-199658 (1992-07-01), None

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