High voltage tolerant voltage pump constructed for a low voltage

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3072961, 307264, 307607, 307578, H02J 100, H02J 1100, H02J 1500

Patent

active

053529367

ABSTRACT:
An integrated circuit charge pump which includes a pair of serially arranged P channel transistor devices connected with their source and drain terminals in series. The devices are constructed as N well devices in a P substrate. Using a pair of N well devices allows higher voltages to be divided and applied across the two devices without reaching the breakdown limits of either the oxide or the junctions between different portions of the devices used in the process. One of the devices has its body well connected to its drain terminal to provide a diode between the source and body well which allows the device to turn on and off when subject to a series of input pulses at its drain terminal. A third similarly biased N well P channel device is connected in series with the pair of P channel devices to provide the voltage pumping effect at an output terminal. These devices have been found capable of generating voltages levels of ten or more volts to circuitry for programming or erasing flash EEPROM cells even the they are a part of integrated circuitry designed for only 3.3 volt usage.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High voltage tolerant voltage pump constructed for a low voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage tolerant voltage pump constructed for a low voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage tolerant voltage pump constructed for a low voltage will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-583612

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.