High voltage tolerable input buffer and method for operating sam

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

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327 81, 327333, 326 81, 326 83, H03K 190185, H03K 19094

Patent

active

061042293

ABSTRACT:
An input buffer for use in an integrated circuit having a V.sub.CC voltage supply and a V.sub.SS voltage supply. The input buffer includes a p-channel field effect transistor (FET) having a source region coupled to the V.sub.CC voltage supply, a drain region coupled to a bias circuit, and a gate electrode coupled to an input terminal. The bias circuit maintains a voltage at the drain region of the p-channel FET which is slightly greater than the V.sub.SS supply voltage when a logic high voltage is applied to the input terminal. In an alternate embodiment, the input buffer includes an n-channel FET having a drain region coupled to the V.sub.CC voltage supply, a source region coupled to the output terminal and a gate electrode coupled to the input terminal. The bias circuit maintains a voltage at the source of the n-channel FET which is greater than the V.sub.SS supply voltage when a logic low voltage is applied to the input terminal.

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