High voltage thyristor with optimized doping, thickness, and she

Details High voltage thyristor with optimized doping, thickness, and she High voltage thyristor with optimized doping, thickness, and she

1983-04-28

1987-07-21

Clawson, Jr., Joseph E.

357 20, 357 55, 357 86, 357 90, H01L 2974

Patent

active

046821996

ABSTRACT:
In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8.times.10.sup.15 atoms/cm.sup.3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/.quadrature.. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.

REFERENCES:
patent: 3513363 (1970-05-01), Herlet
patent: 3855611 (1974-12-01), Neilson et al.
patent: 3897286 (1975-07-01), De Cecco et al.
patent: 3990091 (1976-11-01), Cresswell et al.
patent: 4060825 (1977-11-01), Schlegel
patent: 4062032 (1977-12-01), Neilson
E. Schleger, "A Tech. for Opt. the Design of Power Semi. Devices," IEEE Trans. on Elec. Dev., vol. Ed.-23, #8, Aug. 1976, pp. 924-927.
J. Shimizu et al., "High-Volt. High-Pwr. Gate-Assisted Turn-Off Thyr. for H-F Use," IEEE Trans. on Elec. Dev., vol. Ed-23, #8, Aug. 1976, pp. 883-887.

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