High voltage thin film transistor with second gate

Details High voltage thin film transistor with second gate High voltage thin film transistor with second gate

1989-06-15

1991-01-08

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 4, 357 15, 357 2314, 357 59, 307304, H01L 2701, H01L 2713, H01L 2978, H01L 2712

Patent

active

049840401

ABSTRACT:
A high voltage thin film transistor comprises a charge transport layer, laterally disposed source and drain electrodes, a first gate electrode with one edge laterally overlapping the source electrode and another edge laterally spaced from the drain electrode. A source of high potential is continuously applied to the drain electrode and a source of low potential is applied to the first gate electrode in a time varying manner so as to form a first accumulation channel periodically in the charge transport layer, opposite to the first gate electrode. Device performance is improved by including a second gate electrode for forming a second, weaker, accumulation channel extending laterally from the region of the first accumulation channel toward the drain electrode. A source of potential is applied to the second gate electrode means for maintaining charge carriers within the second accumulation channel so as to prevent the charge transport layer from becoming depleted of charge carriers.

REFERENCES:
patent: 4598305 (1986-07-01), Chiang et al.
patent: 4716446 (1987-12-01), Esser et al.
patent: 4748485 (1988-05-01), Vasudev
patent: 4752814 (1988-06-01), Tuan
patent: 4882295 (1989-11-01), Czubatyj et al.
Marten et al., "Enhancement of Performance and Reliability of Amorphous Silicon High Voltage Thin Film Transistors by Use of Field Plates", IEDM 1989, pp. 341-364.
Dockerty, "Semiconductor Contact Hole Fabricating", IBM Technical Disclosure Bulletin, vol. 26, No. 3A, Aug. 1983.

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