High voltage thin film transistor on PLZT and method of manufact

Details High voltage thin film transistor on PLZT and method of manufact High voltage thin film transistor on PLZT and method of manufact

1985-04-01

1988-06-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437235, 437966, 357 59, H01L 2120

Patent

active

047511966

ABSTRACT:
A high voltage thin film transistor structure and method are disclosed which make it possible to fabricate matrix displays with integrated pixel switches on PLZT substrates. A polysilicon transistor capable of withstanding more than 60 V across the source and drain and with a ratio of on to off current in excess of 10.sup.3 is disclosed. The fabrication method disclosed is suitable for use with brittle and readily oxidizable PLZT substrates.

REFERENCES:
patent: 4317686 (1982-03-01), Anand et al.
Douglas, "The Route to 3-D Chips", High Technology, Sep. 1983, pp. 55-59.
Colclaser, Microelectronics Processing and Device Design, John Wiley & Sons, New York, pp. 46-47.

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