High voltage thin film transistor having a linear doping profile

Details High voltage thin film transistor having a linear doping profile High voltage thin film transistor having a linear doping profile

1993-02-08

1994-04-05

Fourson, George

Fishing, trapping, and vermin destroying

437 21, 437 27, 437909, H01C 21266

Patent

active

053004485

ABSTRACT:
The present invention is directed to a method and thin film transistor having a linear doping profile between the gate and drain regions. This is constructed in a particular manner in order to achieve a thin film transistor having a significantly high breakdown voltage of the order of 700 to 900 volts, much greater than that achieved in the prior art.

REFERENCES:
patent: 4373254 (1983-02-01), Blumenfeld
patent: 4437225 (1984-03-01), Mizutani
patent: 4965213 (1990-10-01), Blake
patent: 5047356 (1991-09-01), Li et al.
Ratnan, "Novel Silicon-on-Insulator MOSFET for High-Voltage Integrated Circuits", Electronics Letters, Apr. 13, 1989, vol. 25, No. 8, pp. 536-537.

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