High voltage switch for eeprom/flash memories

Details High voltage switch for eeprom/flash memories High voltage switch for eeprom/flash memories

1998-06-25

2000-12-26

Nelms, David

Static information storage and retrieval

Powering

365227, 36518533, G11C 700

Patent

active

061669822

ABSTRACT:
A high voltage switch for use in an EEPROM/FLASH memory that may be implemented using a twin-well process (e.g., using only P-channel transistors). The circuit comprises a positive switch configured to present a first and a second switch signal in response to (i) one or more select signals and (ii) an address signal and a second switch configured to present a programing voltage in response to (i) the select signals, (ii) the first and second switch signals and (iii) a high voltage source. A high voltage positive and negative pump may provide the high voltage source.

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