High voltage switch

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Reexamination Certificate

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Details

C257S133000, C257S135000

Reexamination Certificate

active

06906356

ABSTRACT:
A high power switch includes diode and BJT structures interdigitated in a drift layer and separated by insulated trench gates; electrodes contacting the diode and BJT structures provide anode and cathode connections. Shallow N+ regions extend below and around the corners of the oxide side-walls and bottoms of respective gates. A voltage applied across the anode and cathode sufficient to forward bias the diode's p-n junction causes electrons to be injected which provide a base drive current to the BJT sufficient to turn it on and enable current to flow from anode to cathode via the diode and BJT structures. A gate voltage sufficient to reverse bias the junction between the shallow N+ regions and the drift layer forms a potential barrier which blocks current flow through the diode and BJT structures and eliminates the base drive current such that the BJT and said switch are turned off.

REFERENCES:
patent: 5304821 (1994-04-01), Hagino
patent: 5488236 (1996-01-01), Baliga et al.
patent: 5554862 (1996-09-01), Omura et al.
Power Semiconductor Devices, Insulated Gate Bipolar Transistor, Chapter 8, p. 246, B. Jayant Baliga, North Carolina State University, PWS Publishing Company, copyright 1996.
500-V n-Channel Insulated-Gate Biploar Transistor with a Trench Gate Structure, H.-R. Chang, B.Jayant Baliga,IEEE Transactions on Electron Devices, vol. 36, No. 9, Sep. 1989.
High-Voltage Accumulation-Layer UMOSFET's in 4H-SiC, J. Tan, JaA. Cooper, Jr., M.R. Melloch,IEEE Electron Device Letters, vol. 19, No. 12, Dec. 1998.

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