High voltage structures with oxide isolated source and resurf dr

Details High voltage structures with oxide isolated source and resurf dr High voltage structures with oxide isolated source and resurf dr

1993-12-17

1994-09-27

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 51, 257318, 257344, 257401, H04L 2910

Patent

active

053509323

ABSTRACT:
An integrated circuit RESURF LDMOS power transistor employs a source isolated, embedded gate MOS transistor with RESURF LDMOS technology to provide a source isolated high voltage power transistor with low "on" resistance for use in applications requiring electrical isolation between the source and substrate.

REFERENCES:
patent: 4752814 (1988-06-01), Tuan
patent: 5072269 (1991-12-01), Hieda
H. Kitajima, Y. Suzuki and S. Saito; Microelectronics Research Lab., NEC Corp. Sagamihara 229, Japan; Leakage Current Reduction in Sub-Micron Challel Poly-Si TFT's; 2419 Japanese Journal of Applied physics, Int. Conf. on Solid State Devices and Materials (1991) Aug. 27-29, Yokohama, Japan, JP pp. 174-176.

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