High voltage solid-state switch

Details High voltage solid-state switch High voltage solid-state switch

1981-03-27

1986-05-06

Wojciechowicz, Edward J.

357 21, 357 22, 357 39, 357 41, 357 49, H01L 2972

Patent

active

045876568

ABSTRACT:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first n type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end, and an n+ type gate region located between the anode and cathode regions. A second p type region of lower impurity concentration than the anode region surrounds the cathode region so as to separate it from the bulk portion of the semiconductor body. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.

REFERENCES:
patent: 4060821 (1977-11-01), Houston et al.
A MOS-Controlled Triac Device--Scharf et al--pp. 222-223, 1978, IEEE International Solid-State Circuits Conference.

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