High-voltage silicon controlled rectifier structure with...

Details High-voltage silicon controlled rectifier structure with... High-voltage silicon controlled rectifier structure with...

2005-07-19

2005-07-19

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S133000, C257S360000, C257S362000, C257S363000

Reexamination Certificate

active

06919588

ABSTRACT:
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.

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patent: 5959332 (1999-09-01), Ravanelli et al.
patent: 6750489 (2004-06-01), Merrill
Julian Z. Chen, Ajith Amerasekera and Tom Vrotsos, “Bipolar SCR ESD Protection Circuit for High Speed Submicron Bipolar/BiCMOS Circuits”, IEDM, pp. 337-340, (14.1.1-14.1.4), 1995, IEEE.

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