High-voltage silicon controlled rectifier structure

Details High-voltage silicon controlled rectifier structure High-voltage silicon controlled rectifier structure

2003-09-18

2004-11-09

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Reexamination Certificate

active

06815732

ABSTRACT:

BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is a cross-sectional view illustrating an example of a silicon controlled rectifier (SCR) structure
100
in accordance with the present invention.
FIG. 2
is a cross-sectional view illustrating an example of a silicon controlled rectifier (SCR) structure
200
in accordance with an alternate embodiment of the present invention.
FIG. 3
is a cross-sectional view illustrating an example of a silicon controlled rectifier (SCR) structure
300
in accordance with an alternate embodiment of the present invention.
FIG. 4
is a cross-sectional view illustrating an example of a silicon controlled rectifier (SCR) structure
400
in accordance with an alternate embodiment of the present invention.
FIGS. 5A-5D
are graphs illustrating a comparison between the operation of a number of SCR structures in accordance with the present invention.
FIG. 6
is a cross-sectional view illustrating an example of a silicon controlled rectifier (SCR) structure
600
with opposite conductivity types in accordance with the present invention.
FIGS. 7A-7K
are a series of cross-sectional diagrams illustrating an example of a method of forming a silicon controlled rectifier in accordance with the present invention.


REFERENCES:
patent: 6433368 (2002-08-01), Vashchenko et al.
patent: 6696731 (2004-02-01), Mallikarjunaswamy
U.S. patent application Ser. No. 10/649,989, Vashchenko et al., filed Aug. 27, 2003.
U.S. patent application Ser. No. 10/650,000, Vashchenko et al., filed Aug. 27, 2003.
G. Charitat, “Voltage Handling Capability and Termination Techniques of Silicon Power Semicondcutor Devices”, IEEE BCTM 11.1, 2001, pp. 175-183.
Julian Z. Chen, Ajith Amerasekera and Tom Vrotsos, “Bipolar SCR ESD Protection Circuit for HIgh Speed Submicron Bipolar/BiCMOS Circuits”, IEDM, pp. 337-340, (14.1-14.1.4), 1995, IEEE.

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