High voltage Shottky diode

Details High voltage Shottky diode High voltage Shottky diode

1993-04-30

1997-03-25

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257476, 257484, H01L 29872, H01L 2972

Patent

active

056147554

ABSTRACT:
A high operating voltage bipolar transistor (42) includes a base including a first region (52) of a lightly doped layer (44) of semiconductor material of a first conductivity type. The transistor (42) also includes a collector including a buried layer (50) and a collector region (48). The lightly doped layer (44) is formed over the buried layer (50) and the collector region (48) extends through the lightly doped layer (44) and contacts the buried layer (50). The transistor (42) also includes an emitter formed in the base. The transistor (42) provides a high operating voltage without requiring an increased thickness epitaxial layer or additional processing steps. A high Hfe transistor and high voltage Schottky diode are also described.

REFERENCES:
patent: 3906540 (1975-09-01), Hollins
patent: 4062033 (1977-12-01), Suzuki
patent: 4825275 (1989-04-01), Tomassetti
patent: 4912054 (1990-02-01), Tomassetti
patent: 4965643 (1990-10-01), Freeman
patent: 5034337 (1991-07-01), Mosher et al.
patent: 5060044 (1991-10-01), Tomassetti
patent: 5087579 (1992-02-01), Tomassetti
patent: 5148241 (1992-09-01), Sugita
patent: 5153697 (1992-10-01), Mosher et al.

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