Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Patent
1999-06-04
2000-12-19
Mottola, Steven J.
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
330124R, H03F 368
Patent
active
061632201
ABSTRACT:
An integrated circuit two-stage power amplifier provides a high-voltage, series-biased FET amplifier for high-efficiency applications. An input is connected to an input matching network, and a driver cell provides power from the input matching network to an interstage power dividing network. Multiple similar cells in a second stage are connected between the interstage power dividing network and an output matching and combining network and are biased by a series-connected active biasing network. An output is connected to the output matching and combining network. One series-connected active biasing network includes series-connected resistances and a second string of series-connected buffer cells connected between the series-connected resistances and the RF power cells for biasing the RF cells.
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patent: 5694085 (1997-12-01), Walker
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Ferguson, D.W. et al., "35 GHz Psuedomorphic HEMT MMIC Power Amplifier," IEEE MTT-S Digest, pp. 335-338, Jun. 1991.
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Creighton Wray James
Mottola Steven J.
Narasimhan Meera P.
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