High voltage sensor device and method therefor

Details High voltage sensor device and method therefor High voltage sensor device and method therefor

2007-12-11

2007-12-11

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

C438S382000, C257S528000, C257S536000, C257SE21004

Reexamination Certificate

active

11041710

ABSTRACT:
In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.

REFERENCES:
patent: 4792840 (1988-12-01), Nadd
patent: 5053743 (1991-10-01), Mille et al.
patent: 5063307 (1991-11-01), Zommer
patent: 5477175 (1995-12-01), Tisinger et al.
patent: 5498899 (1996-03-01), Palara
patent: 6023092 (2000-02-01), Tung
patent: 6222247 (2001-04-01), Tung
patent: 6356464 (2002-03-01), Balakrishnan et al.
patent: 6509784 (2003-01-01), Seinen et al.
patent: 6680515 (2004-01-01), Hsing
patent: 6989566 (2006-01-01), Noda et al.

Affiliated with

Also associated with

Rating

High voltage sensor device and method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage sensor device and method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage sensor device and method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3852640