High voltage sensor device

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including passive device

Reexamination Certificate

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Details

C438S382000, C257S528000, C257S536000, C257SE21004

Reexamination Certificate

active

07638405

ABSTRACT:
In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.

REFERENCES:
patent: 5477175 (1995-12-01), Tisinger et al.
patent: 6023092 (2000-02-01), Tung
patent: 6222247 (2001-04-01), Tung
patent: 6680515 (2004-01-01), Hsing
patent: 6943069 (2005-09-01), Halamik et al.
patent: 6989566 (2006-01-01), Noda et al.

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