High-voltage semiconductor switching element

Details High-voltage semiconductor switching element High-voltage semiconductor switching element

2008-09-11

2010-06-08

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S138000, C257S142000, C257S147000, C257S152000, C257S153000, C257SE21181, C257SE25024, C257SE29027, C257SE29066, C257SE29214

Reexamination Certificate

active

07732833

ABSTRACT:
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from a collector region of the first conductivity type, which is formed so as to be spaced away from the base region, toward the base region. The width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio varies in a desired manner in accordance with variation in collector current.

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