High voltage semiconductor devices electrically isolated from an

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357 53, 357 43, 357 22, 357 234, 351 231, 351 13, H01L 2978, H01L 2940, H01L 2980, H01L 2990

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046618384

ABSTRACT:
High voltage semiconductor devices include a drift layer region underlying a field gate electrode, the drift layer region having a selected charge density of lesser magnitude than the charge density of the remainder of the drift layer. This tailoring of the charge density of the drift layer region lowers the pinch-off voltage of a MOSFET inherent in the drift layer region. This lower pinch-off voltage decreases the potential of a device buried-layer when the device is in a reverse blocking mode of operation.

REFERENCES:
patent: 4409606 (1983-10-01), Wagenaar et al.
patent: 4422089 (1983-12-01), Vaes et al.
patent: 4494134 (1985-01-01), Wildi et al.
J. A. Appels et al., "High Voltage Thin Layer Devices (Resurf Devices)", Proceedings of the 1979 IEEE International Electron Device Meeting, pp. 238-241.
E. J. Wildi et al., "Modeling and Process Implementation of Implanted Resurf Type Devices", Proceedings of the 1982 IEEE International Electron Device Meeting, pp. 268-271.

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