1988-02-04
1988-10-11
Edlow, Martin H.
357 234, 357 13, 357 41, 357 53, H01L 2978, H01L 2990, H01L 2940, H01L 2702
Patent
active
047775211
ABSTRACT:
A high voltage semiconductor device includes a two-dimensional array of polygonal regions in a higher resistivity body portion of the opposite conductivity type. The p-n junction between these regions and the body portion may be, for example, a drain junction of a D-MOS transistor or a collector junction of a bipolar transistor and is reverse-biased in at least a high voltage mode of operation. In order to relieve the high electric field at the corners of the polygonal regions, a plurality of further regions is distributed in each area of the body portion between facing corners of three or more of the polygonal regions. These further regions of the same conductivity type as the polygonal regions are located on at least one line from each of these corners in a symmetrical arrangement of the further regions within each area.
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Biren Steven R.
Briody Thomas A.
Edlow Martin H.
Featherstone Donald
Tamoshunas Algy
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