High voltage semiconductor device having a novel edge contour

Details High voltage semiconductor device having a novel edge contour High voltage semiconductor device having a novel edge contour

1976-08-24

1977-09-06

James, Andrew J.

357 52, 357 56, 357 73, H01L 2906, H01L 2934, H01L 2330

Patent

active

040471969

ABSTRACT:
A high voltage semiconductor device structure comprises a novel edge contour which directly contributes to increased voltage handling capability. Such a structure may further comprise a collector region shaped in coordination with the edge contour to provide a device having higher voltage capability.

REFERENCES:
patent: 3241010 (1966-03-01), Eddleston
patent: 3320496 (1967-05-01), Topas
patent: 3535774 (1970-10-01), Baker
patent: 3553539 (1971-01-01), Nakashima
patent: 3586549 (1971-06-01), Gray
patent: 3755720 (1973-08-01), Kern
patent: 3972113 (1976-08-01), Nakata et al.
patent: 4000507 (1976-12-01), Nishida et al.

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