1984-12-04
1988-06-28
Carroll, J.
357 14, 357 15, 357 20, 357 22, 357 234, 357 238, 357 34, 357 35, 357 55, 357 65, 357 68, 357 86, H01L 2906, H01L 2980, H01L 2978, H01L 2948
Patent
active
047543108
ABSTRACT:
A field effect transistor, a bipolar transistor, a PIN diode, a Schottky rectifier or other high voltage semiconductor device comprise a semiconductor body having a depletion layer formed throughout a portion in at least a high voltage mode of operation of the device, such as, by reverse biasing a rectifying junction. The known use of a single high-resistivity body portion of one conductivity type to carry both the high voltage and to conduct current results in a series resistivity increasing approximately in proportion with the square of the breakdown voltage. This square-law relationship is avoided by the present invention in which a depleted body portion comprising an interleaved structure of first and second regions of alternating conductivity types carries the high voltage which occurs across the depleted body portion. The thickness and doping concentration of each of these first and second regions are such that when depleted the space charge per unit area formed in each of these regions is balanced at least to the extent that an electric field resulting from any imbalance is less than the critical field strength at which avalanche breakdown would occur in the body portion. The first regions in at least one mode of operation of the device provide electrically parallel current paths extending through the body portion.
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Carroll J.
Miller Paul R.
U.S. Philips Corp.
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