Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation
Patent
1993-06-16
1996-03-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With light activation
257122, 257162, 257653, H01L 2974, H01L 31111
Patent
active
054970105
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The invention relates to a high-voltage switch having a plurality of semiconductor elements connected in series. EP-A-0,377,619 has already disclosed a high-voltage switch which takes over the function of an igniting voltage distributor in the case of steady-state high-voltage distribution, This high-voltage switch consists of semiconductor elements which are arranged in a cascade and are constructed as high-voltage transistors or thyristors, the cascade having light-sensitive zones. The light-sensitive zones can be driven by light-emitting elements in such a way that they switch through at a predetermined instant, for example in accordance with the ignition sequence, and thereby apply the ignition pulses, delivered by the ignition coil, to the downstream sparking plug, In these cascade circuits, 3 to 50 phototransistors or photothyristors are connected in series.
A high-voltage switch is likewise disclosed by German Published Patent Application 3,731,393, Use is made here of break-over diodes as the high-voltage elements, 10 to 50 diodes being stacked one above the other, depending on the dielectric strength of the individual break-over diode and depending on the desired break-over voltage, It is disadvantageous in these known high-voltage switches that the cascade circuit in the form of series circuits, or the stacks require a relatively large amount of room.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide an improved semiconductor device which does not have the disadvantages of the prior art devices described above.
According to the invention the high-voltage semiconductor device includes a single chip having a plurality of semiconductor elements connected in series with each other and including an insulating substrate; a monocrystalline semiconductor carrier of a first conductivity type applied to the insulating substrate; at least two terminals located on opposite sides of the chip; strip-like areas of a second conductivity type formed in the monocrystalline semiconductor carrier, wherein the strip-like areas each extend across the semiconductor carrier at right angles to a longitudinal direction between the at least two terminals, form pn junctions in the semiconductor carrier, are spaced from each other in the longitudinal direction and penetrate an entire thickness of the semiconductor carrier; at least one doped region in the strip-like areas forming an at least four layered component in the single chip, and a light responsive device for reducing a switching voltage of the single chip when the pn junctions are irradiated with light.
The arrangement according to the invention has, by contrast, the advantage that only one Si chip, which is consequently structured with juxtaposed semiconductor elements, is used. The entire chip surface is thereby reduced by approximately 50% by comparison with the stacking technique.
Various embodiments of the invention provide a number of additional advantageous features. It is particularly advantageous that, by applying the Si wafer to an insulating substrate, only at least three free sides, preferably the two longitudinal sides and the top side, have to be surrounded by a partially transparent insulator.
A further advantage is the lateral homogeneous current distribution in the wafer. Since the entire wafer is involved in the structuring and the light can penetrate approximately 100 .mu.m at a wavelength lambda of approximately 900 nm, which corresponds approximately to the entire depth of the wafer, charge carriers can be generated in the entire depth of the wafer.
BRIEF DESCRIPTION OF THE DRAWING
The objects, features and advantages of the present invention will now be illustrated in more detail by the following detailed description, reference being made to the accompanying drawing in which:
FIG. 1 is a diagrammatic cross-sectional view through a single chip containing the break-over diode cascade according to the invention;
FIG. 2 is a top plan view of the single chip shown in FIG. 1;
FIG. 3 is a c
REFERENCES:
patent: 3015762 (1962-01-01), Shockley
patent: 5136348 (1992-08-01), Tsuzuki et al.
Sze, S. M., Physics of Semiconductor Devices, John Wiley, 1981, pp. 224-227.
Denner Volkmar
Herden Werner
Mindl Anton
Vogel Manfred
Crane Sara W.
Robert & Bosch GmbH
Striker Michael J.
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