High voltage semiconductor device

Details High voltage semiconductor device High voltage semiconductor device

2005-09-20

2005-09-20

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S458000, C257S449000, C257S462000, C257S489000, C257S168000, C257S259000, C257S279000, C257S293000, C257S453000, C257S471000, C257S277000, C257S275000, C257S226000, C257S233000, C257S234000, C257S292000

Reexamination Certificate

active

06946717

ABSTRACT:
A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coupled to the active element; and an insulating layer (202) adjacent the substrate and interposed between the passive device and ground surface such that there is no resistive ground path from the passive device to the ground surface.

REFERENCES:
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 5126701 (1992-06-01), Adlerstein
patent: 5159296 (1992-10-01), Nelson
patent: 5341114 (1994-08-01), Calviello et al.
patent: 5343070 (1994-08-01), Goodrich et al.
patent: 6034725 (2000-03-01), Franklin et al.
patent: 2003/0116782 (2003-06-01), Mizutani

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