Active solid-state devices (e.g. – transistors – solid-state diode – With specified shape of pn junction – Interdigitated pn junction or more heavily doped side of...
Patent
1997-09-11
1999-04-13
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
With specified shape of pn junction
Interdigitated pn junction or more heavily doped side of...
257378, 257382, 257496, 257579, H01L 2972
Patent
active
058941649
ABSTRACT:
A lateral IGBT has a n-source layer and a p-contact layer both in contact with a source electrode. The source layer has a trunk adjacent to a channel region under a gate electrode, and a plurality of branches extending from its trunk to the source electrode to be in contact with the source electrode. The contact layer has a trunk in contact with the source electrode, and a plurality of branches extending from its trunk to the source layer trunk The source layer branches and the contact layer branches have shapes complementary with each other and are alternately arranged. The source layer trunk has a width La in an X direction (channel direction), which satisfies a condition, 0.5 .mu.m<La<2 .mu.m.
REFERENCES:
patent: 5760424 (1998-06-01), Oppermann
D.R. Disney, et al., "A Trench-Gate LIGBT Structure and Two LMCT Structures in SOI Substrates", Proc. of 6th ISPSD, May 31, 1994, pp. 405-410.
Funaki Hideyuki
Nakagawa Akio
Terazaki Yoshinori
Yasuhara Norio
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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