High voltage semiconductor device

Details High voltage semiconductor device High voltage semiconductor device

1990-12-24

1991-10-22

Hille, Rolf

357 34, 357 59, 357 54, 357 71, 357 48, 357 49, H01L 2936

Patent

active

050600478

ABSTRACT:
This invention relates to a high voltage semiconductor device comprising: a substrate (44); an epitaxial region (46) on said substrate including a doped electrode region (48) and a doped isolation region (50), said doped electrode region and said doped isolation region being separated by a first distance (54); an isolation layer (56) on part of said epitaxial region between said doped isolation region and said doped electrode region, said isolation layer covering a portion of the end of said doped electrode region; a first polycrystalline semiconductor layer (60) on said isolation layer; and a metallization layer (68,74), said high voltage semiconductor device being characterized by: a second polycrystalline semiconductor layer (40) on said first polycrystalline semiconductor layer.

REFERENCES:
patent: 4409606 (1983-10-01), Wagenaar et al.
patent: 4419685 (1983-12-01), Sugawara et al.
patent: 4516147 (1985-05-01), Koniatsu et al.
patent: 4583106 (1986-04-01), Anantha et al.
patent: 4647958 (1987-03-01), Gardner
patent: 4805004 (1989-02-01), Gandolf et al.
patent: 4879252 (1989-11-01), Komatsu

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