High voltage semi-conductor switching apparatus and method

Details High voltage semi-conductor switching apparatus and method High voltage semi-conductor switching apparatus and method

1985-02-26

1987-01-13

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252C, 361 91, 357 36, 357 48, 357 55, H03K 1760, H03K 1772

Patent

active

046366539

ABSTRACT:
This disclosure is concerned with a novel technique for achieving higher switching speeds than emitter-open switching, with lower forward voltage drops particularly for very high current applications and at lower cost, and with freedom from reverse biased secondary breakdown, through utilizing a relatively standard base drive configuration for the bipolar transistor, GTO or similar semi-conductor switching device(s) but with the connection of a diode from the emitter to ground, with the diode cathode being grounded, and with a high base drive which, together with low inductance in the connection between the emitter and the diode anode ensures against forward biasing of the diode during the turn-off period.

REFERENCES:
patent: 3628059 (1971-12-01), Niu
patent: 4125787 (1978-11-01), Ohhinata et al.
patent: 4195240 (1980-03-01), Otofuji
Jackson et al., "Effects of Emitter-Open Switching on the Turn Off Characteristics of High-Voltage Power Transistors", IEEE, 1980.
Chen et al., "Application of Transistor Emitter-Open Turn-Off Scheme to High Voltage Power Inverters", IEEE, 1981.
Skanadore, "A New Bipolar High Frequency Power Switching Technology Eliminates Load-Line Shaping", Powercon 7 Conference, 1980.
Farrow et al., "A 300 kHz Off-Line Switching Supply Using a Unique Bi-MOS Switch Combination", PCI, Sep./Oct. 1980.

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