High voltage-resistant semiconductor device and method of...

Details High voltage-resistant semiconductor device and method of... High voltage-resistant semiconductor device and method of...

2011-01-18

2011-01-18

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000, C257S774000

Reexamination Certificate

active

07872354

ABSTRACT:
High voltage-resistant semiconductor devices adapted to control threshold voltage by utilizing threshold voltage variation caused by plasma damage resulting from the formation of multilayer wiring, and a manufacturing method thereof. Exemplary high voltage-resistant semiconductor devices include a plurality of MOS transistors having gate insulating films not less than about 350 Å in thickness on a silicon substrate, and the MOS transistors have different area ratios between gate electrode-gate insulating film contact areas and total opening areas of contacts formed on the gate electrodes.

REFERENCES:
patent: 6917075 (2005-07-01), Inoue et al.
patent: 2009/0014796 (2009-01-01), Liaw
patent: 09-036061 (1997-02-01), None
patent: 2005-038958 (2005-02-01), None
patent: 2009-231443 (2009-10-01), None

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