High voltage resistance element

Details High voltage resistance element High voltage resistance element

1982-10-13

1985-11-12

Mayewsky, Volodymyr Y.

Electrical resistors

Zigzag or sinuous resistance element

338218, 338284, 338293, 338287, H01C 310

Patent

active

045531250

ABSTRACT:
A resistance element capable of withstanding a high voltage is formed through impurity diffusion in a single crystal island of a semiconductor integrated circuit substrate. The resistance element includes a resistive region formed in an exposed surface of the single crystal island and folded reciprocatively by at least one and a half turns in a planar zigzag-like pattern. The pitch at which the resistive region is folded is decreased as viewed in the direction in which extension of depletion layer formed within the single crystal island upon application of a voltage between two ends of the resistive region is decreased.

REFERENCES:
patent: 3564475 (1971-02-01), Fujii et al.
patent: 4123741 (1978-10-01), Kiyono et al.
patent: 4196411 (1980-04-01), Kaufman
patent: 4344064 (1982-08-01), Bitler

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