High voltage pump circuit with reduced oxide stress

Details High voltage pump circuit with reduced oxide stress High voltage pump circuit with reduced oxide stress

1998-01-16

2000-06-06

Cunningham, Terry D.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327537, G06F 302

Patent

active

060723580

ABSTRACT:
Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such that the voltage across their gate oxide is reduced. The charge pump of the present invention further provides circuitry to reduce leakage current.

REFERENCES:
patent: 5008799 (1991-04-01), Montalvo
patent: 5126590 (1992-06-01), Chern
patent: 5140182 (1992-08-01), Ichimura
patent: 5266842 (1993-11-01), Park
patent: 5436586 (1995-07-01), Miyamoto
patent: 5448198 (1995-09-01), Toyoshima et al.
patent: 5767734 (1998-06-01), Vest et al.
patent: 5796293 (1998-08-01), Yoon et al.
patent: 5831470 (1998-11-01), Park et al.

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