Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
1999-01-29
2001-08-14
Callahan, Timothy P. (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S536000, C327S589000
Reexamination Certificate
active
06275099
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a high-voltage pump architecture for integrated electronic devices.
BACKGROUND OF THE INVENTION
As known, devices required to internally generate a plurality of high voltages through charge pumps, such as in flash memories, at present comprise separate-unit pumps, which are virtually independent from each other. This does not permit efficient optimization of the device resources.
In particular, since the dimensions of the charge pumps are dependent, inter alia, on the current capacity they should supply, at present only a pump with a high current capacity is produced, which however functions intermittently, and the pumps supplying high output voltages to nodes with a high capacitive load are undersized, such that charging of the respective nodes is slow. In addition, the phase signal generation circuits necessary for the operation of the various pumps are replicated for each pump, thus giving rise to a large consumption of space and current, and a high level of noise.
SUMMARY OF THE INVENTION
The object of the present invention is to provide an architecture that optimizes management of the charge pumps in electronic devices provided with a plurality of pumps in order to improve the efficiency, the consumption, the area occupied, and the setting speed of the high voltages.
According to the present invention, an integrated electronic device is provided, as defined in the attached claims having in one embodiment at least a first charge pump, having a first output connected to a first node, and a second charge pump having a second output connected to a second node; the first charge pump having a first current capacity and the second charge pump having a second current capacity greater than the first current capacity, and a controlled switch interposed between the first output and the second output.
REFERENCES:
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5699018 (1997-12-01), Yamamoto et al.
patent: 5732039 (1998-03-01), Javanifard et al.
patent: 5796293 (1998-08-01), Yoon et al.
patent: 5812017 (1998-09-01), Golla et al.
patent: 6011743 (2000-01-01), Khang
Kawahara et al., “Bit-Line Clamped Sensing Multiplex and Accurate High Voltage Generator for Quarter-Micron Flash Memories,”IEEE Journal of Solid-State Circuits,31(11):1590-1600, Nov. 1996.
Tanzawa and Tanaka, “A Dynamic Analysis of the Dickson Charge Pump Circuit,”IEEE Journal of Solid-State Circuits,32(8):1231-1240, Aug. 1997.
Callahan Timothy P.
Galanthay Theodore E.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
Tarleton E. Russell
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