Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1994-08-26
1997-09-23
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
357355, 357362, 361100, H01L 2974, H01L 31111
Patent
active
056707991
ABSTRACT:
A high voltage protection circuit includes breakdown networks for providing a discharge path between a pair of terminals of a circuit to be protected. Each network conducts current between a supply terminal and another terminal at a low threshold voltage value when power is removed from the supply terminal. The network increases the threshold value when power is applied to the supply terminal to prevent conduction through the breakdown network during normal operation of the circuit to be protected. In one implementation, the protection circuit includes anti-latching circuitry connected to the breakdown network for preventing the breakdown network from latching on after or during the time power is applied to the supply terminals. To minimize the degradation of DC operating characteristics, the leakage currents, due to the protection circuit, between the first terminal and the positive supply terminal, and between the first terminal and the negative supply terminal cancel each other. The protection circuit may be incorporated on the same substrate as the circuit to be protected or it may be incorporated on a separate substrate sharing a common housing with the circuit to be protected. Alternately, the protection circuit say be in its own housing with its external leads connected to the leads of a first housing including the circuit to be protected.
REFERENCES:
patent: 4870530 (1989-09-01), Hurst et al.
patent: 5140401 (1992-08-01), Ker et al.
Crane Sara W.
Harris Corporation
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