Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1991-07-18
1994-10-25
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
257362, 257363, 361 91, 361100, 361101, H01L 2974, H01L 2906, H01L 2978
Patent
active
053592115
ABSTRACT:
A high voltage protection circuit includes a breakdown network for providing a discharge path between a pair of terminal of a circuit to be protected. Each network conducts current between a supply terminal and another terminal at a low threshold voltage value when power is removed from the supply terminal. The network increases the threshold value when power is applied to the supply terminal to prevent conduction through the breakdown network during normal operation of the circuit to be protected. In one implementation, the protection circuit includes anti-latching circuitry connected to the breakdown network for preventing the breakdown network from latching on after or during the time power is applied to the supply terminals. To minimize the degradation of DC operating characteristics, the leakage currents, due to the protection circuit, between the first terminal and the positive supply terminal, and between the first terminal and the negative supply terminal cancel each other. The protection circuit may be incorporated on the same substrate as the circuit to be protected or it may be incorporated on a separate substrate sharing a common housing with the circuit to be protected. Alternately, the protection circuit may be in its own housing with its external leads connected to the leads of a first housing including the circuit to be protected.
REFERENCES:
patent: 3904931 (1975-09-01), Leidich
patent: 3919601 (1975-11-01), Suko et al.
patent: 4100561 (1978-07-01), Ollendorf
patent: 4131928 (1978-12-01), Davis et al.
patent: 4143391 (1979-03-01), Suzuki et al.
patent: 4400711 (1983-08-01), Avery
patent: 4460935 (1984-07-01), Vehira
patent: 4484244 (1984-11-01), Avery
patent: 4543593 (1985-09-01), Fujita
patent: 4567500 (1986-01-01), Avery
patent: 4595941 (1986-06-01), Avery
patent: 4631567 (1986-12-01), Kokado et al.
patent: 4633283 (1986-12-01), Avery
patent: 4736271 (1988-04-01), Mack et al.
patent: 4757363 (1988-07-01), Bohm et al.
patent: 4760433 (1988-07-01), Young et al.
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 4870530 (1989-09-01), Hurst et al.
patent: 4875130 (1989-10-01), Huard
patent: 4891729 (1990-01-01), Sugiyama et al.
patent: 4918563 (1990-04-01), Kanai et al.
patent: 4939616 (1990-07-01), Rountree
Harris--"Wideband, High Slew Rate, High Output Current Operational Amplifier"--HA-2542--May 1990.
Harris--"Low Bias Current, Low Power JFET Input Operational Amplifier"--HA-5180--May 1990.
Harris Corporation
Ngo Ngan Van
LandOfFree
High voltage protection using SCRs does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage protection using SCRs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage protection using SCRs will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-137611