High voltage PN junction and semiconductive devices employing sa

Details High voltage PN junction and semiconductive devices employing sa High voltage PN junction and semiconductive devices employing sa

1973-11-15

1978-02-14

Miller, Jr., Stanley D.

357 40, 357 48, 357 49, 357 50, 357 58, H01L 2972

Patent

active

040742938

ABSTRACT:
A PN junction having very low concentration gradients on both sides exhibits substantially increased breakdown voltages. A PN junction extending to the surface of a semiconductive body is formed by diffusing material of a first conductivity type into material of a second conductivity type in two stages: in the first stage, the surface concentration of impurity atoms is no higher than about 10.sup.16 per cc., and is always two to four orders of magnitude less than conventional junctions. In the second stage, the area of diffusion is smaller, so as to be surrounded by the area of said first stage diffusion, but concentration and depth are at normal levels, roughly 10.sup.17 - 10.sup.20. The higher the concentration is in the second stage, the greater the concentration difference between the two stages must be. Breakdown voltages of devices employing the junction of the invention are improved: planar transistors with BV.sub.cbo = 1000 volts may be produced. Other properties of devices employing the junction of the invention are either not affected or are improved, and employment of the junction is essentially independent of other design parameters. The junction of the invention may be used in both active and passive devices, and is adapted for use in integrated circuits and for PN junction isolation. In dielectrically isolated integrated circuitry, a further improvement is achieved by diffusing into the oxide dielectric and polycrystalline matrix material in areas that will underlie leads, effectively burying the junction in these areas.

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I. Magdo et al., "Ultra High Speed Transistor," IBM Tech. Discl. Bull., vol. 13, No. 6, Nov. 1970, pp. 1423, 1424.
H. Ghosh, "P-EPI Transistor Having a Retarded Base Region," IBM Tech. Discl. Bull., vol. 13, No. 6, Nov. 1970, p. 1740.
R. Denning et al., Epitaxial .pi..nu.N-P+N High-Voltage Power Transistors," IEEE Trans. on Elec. Dev., vol. ED-17, No. 8, Sep. 1970, pp. 711-716.

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