High voltage planar edge termination using a punch-through retar

Details High voltage planar edge termination using a punch-through retar High voltage planar edge termination using a punch-through retar

1990-01-02

1991-07-16

Mintel, William

357 52, 357 20, 357 58, H01L 2990

Patent

active

050328786

ABSTRACT:
A high voltage semiconductor structure having multiple guard rings, wherein guard rings farthest from a main junction are spaced further from each other than are guard rings closer to the main junction is provided. An enhancement region, which is of an opposite conductivity type from the guard rings, is formed between the guard rings to increase punch-through voltage between the guard rings, thereby increasing the breakdown voltage of the device. The enhancement region and close guard ring spacing result in a fine gradation of electric field and high punch-through breakdown voltage between guard rings.

REFERENCES:
patent: 4573066 (1986-02-01), Whight
Semiconductor Devices, Physics and Technology, S. M. Sze, Wiley, N.Y. 1981.
Modern Power Devices, B. Jayant Baliga, John Wiley & Sons, N.Y., pp. 98-101, 1987.

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