Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1982-10-07
1985-07-02
Zazworsky, John
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307573, 307574, 307582, H03K 1706, H03K 17687
Patent
active
045270740
ABSTRACT:
An electronic circuit configured to pass relatively high voltage signals therethrough when enabled, and block both positive and negative signals when appropriately disabled. The features of the circuit are particularly suited for coupling write and erase voltages to a nonvolatile memory array while integrated on a common chip with the array. In one form, the circuit includes a two-phase pump, which upon being enabled draws a transient current from the high voltage input line and raises the voltage level on an internal capacitive node in closed loop fashion by effecting unidirectional transfers of charge between successive capacitive nodes. The elevated internal voltage provides a driving signal to a driving circuit which passes the high voltage on the input line to an output line without incurring threshold voltage losses.
REFERENCES:
patent: 4061933 (1977-12-01), Schroeder et al.
Gupta et al., "A 5V-Only 16K EEPROM Utilizing Oxynitride Dielectrics and EPROM Redundancy", IEEE International Solid State Circuits Conference, vol. 25, Feb. 1982, New York, U.S.A.
Gerber et al., "Low-Voltage Single Supply CMOS Electrically Erasable Read-Only Memory", IEEE Transactions on Electron Devices, vol. ED-27, No. 7, Jul. 1980.
Fujitsu, "Amplifier Circuit of Internal Signal", 56-19589(A), Feb. 24, 1981, Patents Abstracts of Japan, vol. 5, No. 73, May 15, 1981, p. (P-61)745.
Donaldson Darrel D.
Honnigford Edward H.
Poeppelman Alan D.
Cavender J. T.
NCR Corporation
Salys Casimer K.
Zazworsky John
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