Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-02-22
2009-06-09
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S197000
Reexamination Certificate
active
07545018
ABSTRACT:
A high voltage operating field effect transistor has a substrate, a source region and a drain region which are spaced apart from each other in a surface of the substrate, a semiconductor channel formation region disposed in the surface of the substrate between the source region and the drain region, a gate region disposed above the channel formation region, and a gate insulating film region disposed between the channel formation region and the gate region. At least one of a signal electric potential and a signal current is supplied to the source region, and a bias electric potential having an absolute value equal to or larger than a first constant electric potential which changes according to an increase or decrease in a drain electric potential is supplied to the gate region. One end of a rectifying device is connected to the gate region, and a second constant electric potential is supplied to the other end of the rectifying device.
REFERENCES:
patent: 3999210 (1976-12-01), Yamada
patent: 4141023 (1979-02-01), Yamada
patent: 5208477 (1993-05-01), Kub
Hasegawa Hisashi
Hayashi Yutaka
Osanai Jun
Yoshida Yoshifumi
Adams & Wilks
Hayashi Yutaka
Pham Long
Seiko Instruments Inc.
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