High voltage MOSFET without field plate structure

Details High voltage MOSFET without field plate structure High voltage MOSFET without field plate structure

1979-05-30

1981-09-15

Wojciechowicz, Edward J.

357 23, 357 24, 357 45, 357 50, 357 51, 357 52, 357 53, 357 55, 357 56, 357 68, 357 91, H01L 2702

Patent

active

042900786

ABSTRACT:
Integrated monlithic arrays of high voltage metal oxide semiconductor field effect Transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers that may be switched on and off. The HVMOSFET'S includes DMOS-like structures with separate channel and drift regions, closed geometry configurations with center drains, and split oxide topography having relatively thin oxide under a control gate and over a channel region, and relatively thick oxide under a field plate and over a drift region for surface depletion and high voltage field inversion preclusion respectfully. The infra described HVMOSFET is able to prevent field crowding and adjust field lines to be perpendicular relative to the surface without the use of the field plates by the implementation of doped rings around the drain and along the surface of the substrate.

REFERENCES:
patent: 3909320 (1975-09-01), Cauge et al.
patent: 4017883 (1977-04-01), Ho et al.

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