High voltage MOSFET with overlapping electrode structure

Details High voltage MOSFET with overlapping electrode structure High voltage MOSFET with overlapping electrode structure

1979-05-29

1981-09-08

Wojciechowicz, Edward J.

357 23, 357 24, 357 41, 357 52, 357 51, 357 55, 357 56, H01L 2710

Patent

active

042888069

ABSTRACT:
Integrated monlithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers that may be switched on and off. The HVMOSFET'S includes DMOS-like structures with separate channel and drift regions, closed geometry configurations with center drains, and split oxide topography having relatively thin oxide under a control gate and over a channel regon, and relatively thick oxide under a field plate and over a drift region for surface depletion and high voltage field inversion preclusion respectfully. The infra described HVMOSFET includes multiple overlapping field plate and gate electrode able to overcome series resistance associated with HVMOSFET devices having large drift regions.

REFERENCES:
patent: 3909320 (1975-09-01), Cauge et al.
patent: 4017883 (1977-04-01), Ho et al.

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