High voltage MOSFET switch

Details High voltage MOSFET switch High voltage MOSFET switch

1986-06-09

1987-06-30

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307446, 307451, 307576, H03K 17687, H03K 1920, H03K 1716, H03K 19094

Patent

active

046773258

ABSTRACT:
A switching circuit includes two series-connected MOSFET (1, 6) complementing one another, which are interconnected at the drain terminal of each device. The gate terminal of the MOSFET that is grounded is connected to a control input terminal (E). This gate terminal is also connected to the source terminal of a depletion FET (7). The drain terminal of the depletion FET (7) is connected to the gate terminal of the second MOSFET (6) and, in turn, is connected via a resistor (8) to a voltage source (+U). The gate terminal of the depletion FET (7) is grounded. The load (5) is then connected to the drain side of the complementary MOSFET. When the switch is in a blocking condition, the cross current is thus prevented from flowing; and the FET connected to voltage can be completely activated.

REFERENCES:
patent: T952012 (1976-11-01), Lee
patent: 3823330 (1974-07-01), Rapp
patent: 4064405 (1977-12-01), Cricchi et al.
patent: 4326136 (1982-04-01), Le Can et al.
patent: 4384287 (1983-05-01), Sakuma

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