High voltage MOS transistor and production method thereof, and s

Details High voltage MOS transistor and production method thereof, and s High voltage MOS transistor and production method thereof, and s

1991-03-05

1992-08-18

Davie, James W.

357 59, H01L 2978

Patent

active

051403927

ABSTRACT:
A high voltage MOS transistor includes a semiconductor substrate (1) of a first semiconductor type, a gate electrode (14) formed on the semiconductor substrate via a gate oxide layer (13), first and second diffusion regions (15, 16) formed in the semiconductor substrate on both sides of the gate electrode and being of a second semiconductor type opposite to the first semiconductor type, and an electrode (38) which is directly connected to the first diffusion region (15) and is made up of a conductor layer (49) including polysilicon. An impurity concentration of the conductor layer (49) including the polysilicon is higher than an impurity concentration of the first diffusion region (15).

REFERENCES:
patent: 4546366 (1985-10-01), Buchanan
patent: 4949136 (1990-08-01), Jain

Affiliated with

Also associated with

Rating

High voltage MOS transistor and production method thereof, and s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage MOS transistor and production method thereof, and s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage MOS transistor and production method thereof, and s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1252602