High voltage MOS transistor

Details High voltage MOS transistor High voltage MOS transistor

1988-11-28

1990-08-07

Hille, Rolf

357 238, 357 41, H01L 2978

Patent

active

049472321

ABSTRACT:
A metal oxide semiconductor device is featured by the provision of a covering element for covering a channel region of the semiconductor device there being interposed therebetween an insulating layer. The covering element is connected to at least one electrode selected from the drain electrode, the source electrode and the gate electrode. Therefore, the electrical level of the covering element is fixed.

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"CMOS Voltages Range to 150-200 V," Electronics, vol. 49, #21, pp. 40, 42, Oct. 14, 1976.
I. Yoshida et al., "Thermal Stability & Sec. Bkdown Inplanar Power MOSFETS," IEEE Trans. on Elec. Dev., vol. Ed-27 #2, Feb. 1980, pp. 395-398.

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