High voltage MOS transistor

Details High voltage MOS transistor High voltage MOS transistor

1981-05-27

1988-08-23

James, Andrew J.

357 53, 357 59, H01L 2978, H01L 2952

Patent

active

047664746

ABSTRACT:
A MOS transistor is featured by providing mult-layered covering elements for covering a channel region of the semiconductor device. Each of the covering elements is interposed by an insulating layer. Preferably, the covering layers comprise first and second covering layers neither of which are connected to either of the drain electrode, the source electrode, or the gate electrode. A field plate layer, as a third covering layer, is disposed over the first and second covering layers.

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patent: 4199774 (1980-04-01), Plummer
patent: 4270137 (1981-05-01), Coe
patent: 4288803 (1981-09-01), Ronen
patent: 4292729 (1981-10-01), Powell
patent: 4614959 (1986-09-01), Nakagawa

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